2002/11/25 by Hiroshi Imamura, Imamura, Hiroshi
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/0211541
4pages, 3figures
arxiv created 2002/11/25 · openalex publication_date 2002/11/25 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The spin-configuration of semiconductor artificial molecules consisting of quantum dots and spin field effect transistors is studied theoretically. We find that the antiferromagnetic spin configuration can be changed to the ferromagnetic one by applying a gate voltage to the spin field effect transistors. We show that the square-norm of the total spin of an artificial molecule oscillates with the twist angle θ and has maxima at θ= an odd integer times π. We also show that the square-norm of the total spin of the ring-shaped artificial molecule changes drastically at certain values of θ where the lowest two energy levels cross each other.