2010/09/19 by Jungbum Yoon, Chun‐Yeol You, Chun-Yeol You +10
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and interfaces #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1009.3618
5 Figures
arxiv created 2010/09/19 · openalex publication_date 2010/09/19 · arxiv updated 2010/09/21 · openalex created_date 2022/09/05 · openalex updated_date 2026/07/28
We investigate the influence of the domain wall ferromagnetic resonance frequency on the spin transfer torque in a ferromagnetic nanowire. By employing micromagnetic simulations with the spin transfer torque, we find that the domain wall resonance frequency decreases with increasing spin polarized current density, when there is no change in the resonance frequency of the domain itself. Surprisingly, the variation of the resonance frequency is remarkable (> 1.6 GHz) with the spin transfer torque even though the domain wall is pinned. Since the presented domain wall ferromagnetic resonance study has been performed for the pinned domain wall, the contributions of extrinsic defects are excluded. It is strong advantages of the present study, since the effects of extrinsic pinning sites are inevitable in the imaging or transport measurements.