2014/01/08 by A. V. Sachenko, Sachenko, A. V., A. E. Belyaev +16
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #Semiconductor materials and interfaces #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1401.1658
arxiv created 2014/01/08 · openalex publication_date 2014/01/08 · arxiv updated 2014/01/09 · openalex created_date 2016/10/21 · openalex updated_date 2026/07/28
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results can be explained within the framework of the mechanism of current flow through metal shunts (associated with dislocations) penetrating into the semiconductor bulk, with allowance being made for electron freeze-out at helium temperatures. Contact ohmicity in the 4.2/30K temperature range is due to accumulation band bending near shunt ends at the metal/semiconductor interface.