2025/07/20 by Mengyang Cui, Cui, Mengyang
Physics and Astronomy · #Superconducting and THz Device Technology #Quantum and electron transport phenomena #Topological Materials and Phenomena
paper · pdf · doi:10.48550/arxiv.2507.14923
Dark current in silicon-based blocked impurity band (BIB) infrared detectors has long been a critical limitation on device performance. This work proposes a chiral-phonon-assisted spin current model at interfaces to explain the parabolic-like dark current behavior observed at low bias voltages. Concurrently, the spatially-confined charge transport theory is employed to elucidate the dark current generation mechanism across the entire operational voltage range.