2013/07/24 by Jialun Liu, Chun He, Liu, J. +11
Engineering · Materials Science · #Advanced ceramic materials synthesis #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Silicon Carbide Semiconductor Technologies
paper · pdf · doi:10.48550/arxiv.1307.6324
openalex publication_date 2013/07/24 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We propose a promising two-dimensional nano-sheet of SiC2 (SiC2-pentagon) consisting of tetrahedral silicon atoms and triple-linked carbon atoms in a fully-pentagon network. The SiC2-pentagon with buckled configuration is more favorable than its planar counterpart and previously proposed SiC2-silagraphene with tetra-coordinate silicon atoms; and its dynamical stability is confirmed through phonon analyzing. Buckled SiC2-pentagon is an indirect-band-gap semiconductor with a gap of 1.388 eV. However, its one-dimensional nanoribbons can be metals or semiconductors depending on the edge type, shape, and decoration. Finally, we propose a method to produce the buckled SiC2-pentagon through chemical exfoliation on the beta-SiC(001)-c(2*2) SDB surface.