Investigation of Amorphous Germanium Contact Properties with Planar Detectors Made from Home-Grown Germanium Crystals

2018/09/11 by Wei, W. -Z., Meng, X. -H., Yang, Y. -Y. +6
#FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Nuclear Experiment (nucl-ex)

paper · doi:10.48550/arxiv.1809.04111

Abstract

The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals grown at the University of South Dakota (USD). In the fabrication process, a HPGe crystal slice cut from a USD-grown crystal was coated with a high resistivity thin film of amorphous Ge (a-Ge) followed by depositing a thin layer of aluminum on top of the a-Ge film to define the physical area of the contacts. We investigated the detector performance including the I-V characteristics, C-V characteristics and spectroscopy measurements for a few detectors. The results document the good quality of the USD-grown crystals and electrical contacts.

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