2025/12/03 by Advait Gilankar, Gilankar, Advait, Julian Gervassi-Saga +11
Materials Science · Physics and Astronomy · Engineering · #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Photocathodes and Microchannel Plates
paper · pdf · doi:10.48550/arxiv.2512.04033
In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSD) integrated with space-modulated junction termination extension (SM-JTE) and compare the performance with planar Ni/Ga2O3 schottky diodes (SBDs) and p-NiO/Ga2O3 heterojunction diodes (HJDs). The JBSDs achieved breakdown voltages exceeding 1.8 kV along with low leakage currents (<10-2 A/cm2), while displaying low turn on voltage (VON) of ~1V, which is similar to that of planar Ni/Ga2O3 SBDs. The fabricated devices showed excellent forward characteristics with low differential on-resistance (Ron,sp) ranging from 4-10.5 mΩ-cm2, for fin width between 0.6- 1.25 microns. Best performing device with fin width of 0.85μm showed a unipolar figure of merit (FOM) of ~0.7GW/cm2. This work showcases the benefits of trench JBS design along with SM-JTE edge-termination for efficient high-performance kilovolt-class \beta- Ga2O3 diodes.