vix.ing · top · new · best · stats · spec

Terahertz-induced tunnel ionization drives coherent Raman-active phonon in Bismuth

2024/08/11 by Patrick L. Kramer, Cheng, Bing, Mariano Trigo +13 · 1 citation
Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mechanical and Optical Resonators #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Photonic and Optical Devices #Terahertz technology and applications

paper · pdf · doi:10.48550/arxiv.2408.05770

openalex publication_date 2024/08/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Driving coherent lattice motion with THz pulses has emerged as a novel pathway for achieving dynamic stabilization of exotic phases that are inaccessible in equilibrium quantum materials. In this work, we present a previously unexplored mechanism for THz excitation of Raman-active phonons. We show that intense THz pulses centered at 1 THz can excite the Raman-active A1g phonon mode at 2.9 THz in a bismuth film. We rule out the possibilities of the phonon being excited through conventional anharmonic coupling to other modes or via a THz sum frequency process. Instead, we demonstrate that the THz-driven tunnel ionization provides a plausible means of creating a displacive driving force to initiate the phonon oscillations. Our work highlights a new mechanism for exciting coherent phonons, offering potential for dynamic control over the electronic and structural properties of semimetals and narrow-band semiconductors on ultrafast timescales.

Cited by

Related