2017/11/30 by Manushree Tanwar, Tanwar, Manushree, Priyanka Yogi +12
Engineering · Materials Science · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #Silicon Nanostructures and Photoluminescence
paper · pdf · doi:10.48550/arxiv.1711.11467
openalex publication_date 2017/11/30 · openalex created_date 2022/10/01 · openalex updated_date 2026/07/28
A comparative analysis of two Raman line-shape functions has been carried out\nto validate the true representation of experimentally observed Raman scattering\ndata for semiconducting nanomaterials. A modified form of already existing\nphonon confinement model incorporates two basic considerations, phonon momentum\nconservation and shift in zone centre phonon frequency. After incorporation of\nthe above mentioned two factors, a rather symmetric Raman line-shape is\ngenerated which is in contrary to the usual asymmetric Raman line-shapes\nobtained from nanostructured semiconductor. By fitting an experimentally\nobserved Raman scattering data from silicon nanostructures, prepared by metal\ninduced etching, it can be established that the Raman line-shape obtained\nwithin the framework of phonon confinement model is a true representative Raman\nline-shape of sufficiently low dimensions semiconductors.\n