Partial Inhibition of Spontaneous Voltage Recovery (`Memory Effect') of Commercial EDLC Supercapacitors by Stationary Magnetic Field

2014/07/29 by Sekhar Banerjee, Banerjee, Sekhar, Parthasarathi Majumdar +1
Chemistry · Materials Science · Physics and Astronomy · #Catalytic Processes in Materials Science #Electrochemical Analysis and Applications #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Supercapacitor Materials and Fabrication #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.1407.7817

4 pages Latex2e with 6 figures in png format

arxiv created 2014/07/29 · openalex publication_date 2014/07/29 · arxiv updated 2014/07/30 · openalex created_date 2022/09/05 · openalex updated_date 2026/07/28

Abstract

We report preliminary findings on partial inhibition of spontaneous voltage recovery under open circuit conditions, following full charge and discharge to null potential (`memory effect'), of commercial EDLC supercapacitors of Faradaic values ranging between 1-25 Farad (rated at 2.7 volts), upon exposure to an approximately homogeneous, stationary magnetic field of about 100 milli-Tesla.

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