2022/07/27 by Zetao Zhang, Zhang, Zetao, Yizhou Liu +3
Materials Science · Mathematics · Physics and Astronomy · #2D Materials and Applications #Berry #Berry connection and curvature #Condensed matter physics #Curvature #FOS: Physical sciences #Ferromagnetism #Geometric phase #Geometry #Hall effect #Magnetic field #Magnetic properties of thin films #Magnetization #Magnetoresistance #Mathematics #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Physics #Quantum mechanics #Topological Materials and Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.2207.13233
published in arXiv (Cornell University) (Cornell University)
arxiv created 2022/07/27 · openalex publication_date 2022/07/27 · arxiv updated 2022/07/28 · openalex created_date 2022/07/30 · openalex updated_date 2026/07/28
Magnetotransport such as the giant magnetoresistance and Hall effect lies at the heart of fundamental physics and technologies. Recently, some experiments have clearly demonstrated linear magnetotransport (LMT) proportional to magnetic field but the underlying physical mechanism is still unclear. In this work, we show that Berry curvature effect is a new mechanism dominating the LMT. The Berry-curvature-induced LMT widely exists in 66 out of 122 magnetic point groups. For typical magnetic Weyl semimetals Co3Sn2S2 and ferromagnetic MnBi2Te4, Berry curvature induces LMT conductivities reaching orders of 104 and 102 \rm Ω-1m-1 per tesla, respectively, which are tunable through magnetization canting induced by moderate magnetic fields. We further reveal that Berry-curvature-induced LMT can be detected by Hall effect and especially intrinsic magnetoresistance exceeding 100% per tesla insensitive to the sample quality. Our results agree with recent experiments and uncover the important role of Berry curvature in LMT.