2007/12/12 by T. J. Echtermeyer, Echtermeyer, T. J., M. C. Lemme +11 · 1 citation
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.0712.2026
arxiv created 2007/12/12 · openalex publication_date 2007/12/12 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Conventional field effect transistor operation in graphene is limited by its zero gap and minimum quantum conductivity. In this work, we report on controlled electrochemical modification of graphene such that its conductance changes by more than six orders of magnitude, which enables reversible bipolar switching devices. The effect is explained by a chemical reaction of graphene with hydrogen (H+) and hydroxyl (OH-), which are catalytically generated from water molecules in the sub-stochiometric silicon oxide gate dielectric. The reactive species attach to graphene making it nonconductive but the process can subsequently be reversed by short current pulses that cause rapid local annealing. We believe that the demonstrated electrochemical field effect devices are viable candidates for future logic circuits, non-volatile memories and novel neuromorphic processing concepts.