2010/01/13 by Shangduan Wu, Feng Liu, Wu, Shangduan +1
Physics and Astronomy · #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.dis-nn #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1001.2057
4 pages,4 figures
arxiv created 2010/01/13 · arxiv updated 2010/01/14
The criticality of vacancy-induced metal-insulator transition (MIT) in graphene is investigated by Kubo-Greenwood formula with tight-binding recursion method. The critical vacancy concentration for the MIT is determined to be 0.053%. The scaling laws for transport properties near the critical point are examined showing several unconventional 2D localization behaviors. Our theoretical results have shed some new lights to the understanding of recent experiments in H-dosed graphene and of 2D disordered systems in general.