2024/09/18 by Nima Taghipour, Taghipour, Nima, Mariona Dalmases +7
Engineering · Materials Science · Physics and Astronomy · #Applied Physics (physics.app-ph) #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Photonic Crystals and Applications #Quantum Dots Synthesis And Properties
paper · pdf · doi:10.48550/arxiv.2409.11982
openalex publication_date 2024/09/18 · openalex created_date 2024/10/25 · openalex updated_date 2026/07/30
Achieving low-threshold infrared stimulated emission in solution-processed quantum dots is critical to enable real-life application including photonic integrated circuits (PICs), LIDAR application and optical telecommunication. However, realization of low threshold infrared gain is fundamentally challenging due to high degeneracy of the first emissive state (e.g., 8-fold) and fast Auger recombination. In this letter, we demonstrate ultralow-threshold infrared stimulated emission with an onset of 110 uJ.cm-2 employing cascade charge transfer (CT) in Pb-chalcogenide colloidal quantum dot (CQD) solids. In doing so, we investigate this idea in two different architectures including a mixture of multiband gap CQDs and layer-by-layer (LBL) configuration. Using transient absorption spectroscopy, we show ultrafast cascade CT from large band-gap PbS CQD to small band-gap PbS/PbSSe core/shell CQDs in LBL (~ 2 ps) and mixture (~ 9 ps) configuration. These results indicate the feasibility of using cascade CT as an efficient method to reduce optical gain threshold in CQD solid films.