2009/02/05 by Dimitri Chekulaev, D. Chekulaev, A. Kaplan +2 · 1 citation
Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Other Condensed Matter (cond-mat.other) #Photonic Crystals and Applications #Photonic and Optical Devices #Plasmonic and Surface Plasmon Research #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.48550/arxiv.0902.0939
3 pages, 4 figures
arxiv created 2009/02/05 · openalex publication_date 2009/02/05 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have investigated ultrafast carriers dynamics in crystalline silicon nano-pillars structure using a pump-probe reflectivity method with 800 nm, 150 fs laser pulses and fluence in the range of 17 - 170 mJ/cm2. Dimensions of the structure allow us to eliminate contribution from the diffusion process to the relaxation dynamics of the excited carriers. Strong intensity-dependent time-resolved reflectivity change, ΔR(τd), was monitored in the submelting regime. At strong pumping ΔR(τd) can reach up to 8%, a several times higher than for a bulk silicon. From the measurements we deduced recombination time of up to 10 ns at carriers density of ~1 x 1020 cm-3, while electron-phonon interaction occurs during 350-400 fs and it is independent of the concentration.