2016/02/02 by Hosung Seo, Marco Govoni, Seo, Hosung +3
Engineering · Materials Science · Physics and Astronomy · #Acoustic Wave Resonator Technologies #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum Physics (quant-ph) #Semiconductor materials and devices #cond-mat.mtrl-sci #quant-ph
paper · pdf · doi:10.48550/arxiv.1602.01079
In press. 32 pages, 4 figures, 3 tables, Scientific Reports 2016
arxiv created 2016/02/02 · openalex publication_date 2016/02/02 · arxiv updated 2016/02/03 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Spin defects in wide-band gap semiconductors are promising systems for the realization of quantum bits, or qubits, in solid-state environments. To date, defect qubits have only been realized in materials with strong covalent bonds. Here, we introduce a strain-driven scheme to rationally design defect spins in functional ionic crystals, which may operate as potential qubits. In particular, using a combination of state-of-the-art ab-initio calculations based on hybrid density functional and many-body perturbation theory, we predicted that the negatively charged nitrogen vacancy center in piezoelectric aluminum nitride exhibits spin-triplet ground states under realistic uni- and bi-axial strain conditions; such states may be harnessed for the realization of qubits. The strain-driven strategy adopted here can be readily extended to a wide range of point defects in other wide-band gap semiconductors, paving the way to controlling the spin properties of defects in ionic systems for potential spintronic technologies.