2024/03/13 by Wang, Hongguang, Harbola, Varun, Wu, Yu-Jung +2 · 3 citations
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Strongly Correlated Electrons (cond-mat.str-el)
paper · doi:10.48550/arxiv.2403.08736
Epitaxial growth of thin-film heterostructures is generally considered the most successful procedure to obtain interfaces of excellent structural and electronic quality between three-dimensional materials. However, these interfaces can only join material systems with crystal lattices of matching symmetries and lattice constants. We present a novel category of interfaces, the fabrication of which is membrane-based and does not require epitaxial growth. These interfaces therefore overcome limitations imposed by epitaxy. Leveraging the additional degrees of freedom gained, we demonstrate atomically clean interfaces between three-fold symmetric sapphire and four-fold symmetric SrTiO3. Atomic-resolution imaging reveals structurally well-defined interfaces with a novel moiré-type reconstruction.