2024/11/14 by V. V. Lendyashova, I. V. Ilkiv, Lendyashova, Vera V. +9
Engineering · Materials Science · Physics and Astronomy · #97M50 #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #J.2.9 #Optics (physics.optics) #Semiconductor Quantum Structures and Devices #Silicon Nanostructures and Photoluminescence
paper · pdf · doi:10.48550/arxiv.2411.09295
openalex publication_date 2024/11/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a silicon matrix has been studied. The photoluminescence signal at 1650 nm from submonolayer quantum dots at low temperatures up to 120 K was obtained. It was established that the use of a two-stage method of silicon overgrowing InAs nanoislands makes it possible to increase the photoluminescence intensity by improving the crystalline quality of heterostructures. Analysis of the temperature dependence allowed us to calculate an activation energy for electrons confined in the quantum dots potential well at the level of the thermal energy at room temperature.