2015/08/19 by Jian Cui, Cui, Jian
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1508.04511
3 pages, 2 figures
arxiv created 2015/08/19 · arxiv updated 2015/08/20
The same as in microprocessor fabrication, nonvolatile memory devices are facing the problem in device size scaling down, such as large leakage current density. High-k materials are considered to solve it. However, simply replacing low-k to high-k materials, while keeping the structure as before, is not a good solution. Based on our analysis, we proposed a novel structure, in which charges are injected from top gate electrode. In this structure, high charge injection, large memory window and long retention time can be expected.