Physics-Based Modeling of TID Induced Global Static Leakage in Different\n CMOS Circuits

2017/04/24 by Gennady I. Zebrev, Zebrev, Gennady I., Vasily V. Orlov +5
Engineering · #FOS: Physical sciences #Integrated Circuits and Semiconductor Failure Analysis #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Radiation Effects in Electronics #Semiconductor materials and devices #Space Physics (physics.space-ph)

paper · pdf · doi:10.48550/arxiv.1704.07265

openalex publication_date 2017/04/24 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Compact modeling of inter-device radiation-induced leakage underneath the\ngateless thick STI oxide is presented and validated taking into account CMOS\ntechnology and hardness parameters, dose-rate and annealing effects, and\ndependence on electric modes under irradiation. It was shown that proposed\napproach can be applied for description of dose dependent static leakage\ncurrents in complex FPGA circuits.\n

Citations

• Radiation Effects in MOS Oxides

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