Residual Resistance in a 2DES: A Phenomenological Approach

2003/05/23 by A. F. Volkov, Volkov, A. F., V. V. Pavlovskii +2
Engineering · Physics and Astronomy · #Condensed Matter (cond-mat) #FOS: Physical sciences #Integrated Circuits and Semiconductor Failure Analysis #cond-mat

paper · pdf · doi:10.48550/arxiv.cond-mat/0305562

7 pages, 3 Fig; typos corrected, references added

openalex publication_date 2003/05/23 · arxiv created 2003/10/06 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We consider a simple phenomenological model of a semiconductor with absolute negative conductance in a magnetic field. We find the form of the domains of the electric field and current which arise as a result of an instability of a uniform state. We show that in both Corbino disc and Hall bar samples the residual conductance and resistance are negative and exponentially small; they decrease exponentially with increasing length L_x,y.

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