2020/08/19 by Sarah Gamal, Gamal, Sarah, Mohamed M. Fadlallah +5
Engineering · Materials Science · #Advancements in Battery Materials #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Supercapacitor Materials and Fabrication
paper · pdf · doi:10.48550/arxiv.2008.08714
openalex publication_date 2020/08/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Graphene nanomeshes (GNMs) are novel materials that recently raised a lot of\ninterest. They are fabricated by forming a lattice of pores in graphene.\nDepending on the pore size and pore lattice constant, GNMs can be either\nsemimetallic or semiconducting with a gap large enough (0.5 eV) to be\nconsidered for transistor applications. The fabrication process is bound to\nproduce some structural disorder due to variations in pore sizes. Recent\nelectronic transport measurements in GNM devices (ACS Appl. Mater. Interfaces\n10, 10362, 2018) show a degradation of their bandgap in devices having\npore-size disorder. It is therefore important to understand the effect of such\nvariability on the electronic properties of semiconducting GNMs. In this work\nwe use the density functional-based tight binding formalism to calculate the\nelectronic properties of GNM structures with different pore sizes, pore\ndensities, and with hydrogen and oxygen pore edge passivations. We find that\nstructural disorder reduces the electronic gap and the carrier group velocity,\nwhich may interpret recent transport measurements in GNM devices. Furthermore\nthe trend of the bandgap with structural disorder is not significantly affected\nby the change in pore edge passivation. Our results show that even with\nstructural disorder, GNMs are still attractive from a transistor device\nperspective.\n