Reduced Hamiltonian for Electronic States of Dilute Nitride Semiconductors

2014/12/26 by Masato Morifuji, Morifuji, Masato, Fumitaro Ishikawa +1 · 1 citation
Engineering · Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1412.7908

7 pages, 8 figures

arxiv created 2014/12/26 · openalex publication_date 2014/12/26 · arxiv updated 2014/12/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We present a novel model to describe conduction band of GaN_xAs_1-x (GaNAs). As well known, GaNAs shows exotic behavior such as large band gap bowing. Although there are various models to describe the conduction band of GaNAs, origin of the band gap bowing is still under debate. On the basis of perturbation theory, we show that the behavior of conduction band is mainly arising from intervalley mixing between Gamma and L or X. By using renormalization technique and group theoretical treatment, we derive a reduced Hamiltonian which describes well the band gap shrinkage of GaNAs.

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• Perturbation analysis on large band gap bowing of dilute nitride semiconductors

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