2015/01/22 by V. G. Karpov, В. Г. Карпов, R. E. E. Maltby +7
Computer Science · Engineering · Physics and Astronomy · #Advanced Memory and Neural Computing #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Neural Networks and Applications #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1501.05589
6 pages, 3 figures
arxiv created 2015/01/22 · openalex publication_date 2015/01/22 · arxiv updated 2015/01/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We consider the effect of metal electrodes on the polarizability and nucleation of metal phases responsible for the operations of the emerging solid state memory. Our analysis is based on the image charge approach. We find results for point dipoles in static and oscillatory fields as well as an erect cylindrical nucleus near metal surfaces in resistive switching memories. We predict a large increase in polarizability and nucleation rate due to the metal electrode effects.