2015/12/23 by Maxim Knyazev, M. A. Knyazev, Knyazev, Maxim +9
Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Chemical Physics (physics.chem-ph) #Diamond and Carbon-based Materials Research #Electron and X-Ray Spectroscopy Techniques #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci #physics.chem-ph
paper · pdf · doi:10.48550/arxiv.1512.07369
16 pages, 7 figures
arxiv created 2015/12/23 · openalex publication_date 2015/12/23 · arxiv updated 2015/12/24 · openalex created_date 2022/08/30 · openalex updated_date 2026/07/28
The first selective growth of graphenic carbon thin films on silicon dioxide is reported. A preliminary e-beam exposure of the substrate is found to strongly affect the process of such films growth. The emphasis is placed on the influence of substrate exposure on the rate of carbon deposition. The explanation of this effect is proposed. The data of electrical and optical measurements and the results of atomic force and scanning electron microscopy and Raman spectroscopy studies are reported. The results suggest that the selective growth of graphenic carbon thin films on an irradiated SiO2/Si substrate is a promising approach to producing a microstructure at the pre-synthesis step without full lithography process.