Electronic topological transitions in Cd at high pressures

2015/11/06 by Varadharajan Srinivasan, Srinivasan, Varadharajan, B. K. Godwal +5
Earth and Planetary Sciences · Materials Science · Physics and Astronomy · #Crystal Structures and Properties #FOS: Physical sciences #High-pressure geophysics and materials #Materials Science (cond-mat.mtrl-sci) #X-ray Diffraction in Crystallography #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1511.01989

5 figures

arxiv created 2015/11/06 · openalex publication_date 2015/11/06 · arxiv updated 2015/11/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Pressure-induced changes in the Fermi surface of Cd up to 40 GPa are studied using highly accurate density-functional theory calculations. The topology of Fermi surface changes at pressures of 2, 8, 12 , 18 and 28 GPa indicating electronic topological transitions (ETTs). Structural parameters, compressibility data and elastic constant reveal anomalies across these ETTs. The computed equation of state at 300 K is in excellent agreement with the experimental data. In view of the highly controversial nature of these ETTs the present studies are aimed at motivating the experimentalists for their direct detection at high pressures.

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