2022/11/15 by Sania Dad, Dad, Sania, P. Dziawa +11
Materials Science · Physics and Astronomy · #Advanced Thermoelectric Materials and Devices #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Topological Materials and Phenomena
paper · pdf · doi:10.48550/arxiv.2211.08154
openalex publication_date 2022/11/15 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We investigate the full and half-shells of Pb(1-x)Sn(x)Te topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV-VI shell with respect to the III-V core the lattice mismatch along the nanowire axis is less than 4%. The Pb(1-x)Sn(x)Te solid solution is chosen due to the topological crystalline insulator properties for some critical concentrations of Sn (x >= 0.4). The IV-VI shells are grown with different compositions spanning from binary SnTe, through Pb(1-x)Sn(x)Te with decreasing x value down to binary PbTe (x = 0). The samples are analyzed by scanning transmission electron microscopy, which reveals the presence of (110) or (100) oriented binary PbTe and (100)Pb(1-x)Sn(x)Te on the sidewalls of wurtzite GaAs NWs.