Hall Coefficient in the doped Mott Insulator

1995/12/22 by Pinaki Majumdar, Majumdar, Pinaki, H. R. Krishnamurthy +1
Physics and Astronomy · #Condensed Matter (cond-mat) #FOS: Physical sciences #Magnetic properties of thin films #Physics of Superconductivity and Magnetism #Theoretical and Computational Physics #cond-mat

paper · pdf · doi:10.48550/arxiv.cond-mat/9512151

4 pages Revtex, 1 uuencoded, gzipped file for 4 ps figures

arxiv created 1995/12/22 · openalex publication_date 1995/12/22 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We compute the (zero frequency) Hall coefficient R_H, and the high frequency Hall constant R_H^* for the strong coupling Hubbard model away from half-filling, in the d=∞/ local approximation, using the new iterated perturbation scheme proposed by Kajueter and Kotliar. We find quantitative agreement of our R_H^* with the QMC results obtained in two dimensions by Assaad and Imada [Phys. Rev. Lett. \bf 74, 3868 (1995)]. However while the \it sign of R_H is quite accurately reproduced by R_H^* the doping dependence of its magnitude at large U is not. We report results for the complete temperature (T), doping (x) and U dependence of R_H and R_H^* and discuss their possible relevance to doped cuprates.

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