2008/11/26 by P. N. Timonin, Timonin, P. N.
Physics and Astronomy · #FOS: Physical sciences #Statistical Mechanics (cond-mat.stat-mech) #cond-mat.stat-mech
paper · pdf · doi:10.48550/arxiv.0811.4302
7 pages, 9 figures
arxiv created 2008/11/26 · arxiv updated 2009/12/01
The (1+1)-dimensional kinetic model of crystal growth with simulated self-attraction and random sequential or parallel dynamics is introduced and studied via Monte-Carlo simulations. To imitate the attraction of absorbing atoms the probability of deposition is chosen to depend on the number of the nearest-neighbor atoms surrounding the deposited atom so it increases with this number. As well the evaporation probabilities are chosed to roughly account for this self-attraction. The model exhibits the interface depinning transition with KPZ-type roughness behavior in the moving phase. The critical indices of the correlation lengths are ν_∥ = 0.82 ± 0.03,\rmν_ \bot = 0.55 ± 0.02 and the critical index of the growth velocity is 1.08 ± 0.03 indicating the new universality class of the depinning transition. The critical properties of the model do not depend on the type of dynamics implemented.