Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]

2016/08/27 by Masaki Kobayashi, Kobayashi, Masaki, Shinobu Ohya +19
Engineering · Materials Science · #Advanced Semiconductor Detectors and Materials #Electron and X-Ray Spectroscopy Techniques #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Photocathodes and Microchannel Plates

paper · pdf · doi:10.48550/arxiv.1608.07718

openalex publication_date 2016/08/27 · openalex created_date 2016/09/16 · openalex updated_date 2026/07/28

Abstract

Clarification of the position of the Fermi level (E_F) is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor Ga_1-xMn_xAs (GaMnAs). In a recent publication, Souma et al. [Sci. Rep. 6, 27266 (2016)], have investigated the band structure and the E_F position of GaMnAs using angle-resolved photoemission spectroscopy (ARPES), and concluded that E_F is located in the valence band (VB). However, this conclusion contradicts a number of recent experimental results for GaMnAs, which showed that E_F is located above the VB maximum in the impurity band (IB). Here, we show an alternative interpretation of their ARPES experiments, which is consistent with those recent experiments and supports the picture that E_F is located above the VB maximum in the IB.

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