Thin interface limit for phase-field models of solidification with local mobility correction

2019/05/08 by Hubig, Stephan, Schiedung, Raphael, Steinbach, Ingo
#Computational Physics (physics.comp-ph) #FOS: Physical sciences

paper · doi:10.48550/arxiv.1905.02965

Abstract

A new approach is developed to derive an analytical form for mobility corrections in phase-field models for pure material solidification. Similar to the thin interface limit approach (Karma and Rappel, 1996) it seeks to remove systematic errors in the kinetics of phase-field models that arise due to the diffusivity of the interface. The new approach harnesses local information within the diffuse interface instead of an expansion within the interface peclet number p_e=η/δ, the ratio of diffuse interface thickness to diffusion length. Therefore it has no need for an approximation of p_e being small. This results in a broader range of applicability of the approach for higher p_e.

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