2010/11/26 by Eric Whiteway, Whiteway, Eric, Victor Yu +7
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #cond-mat.dis-nn #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1011.5712
4 figures, 1 table
openalex publication_date 2010/11/26 · arxiv created 2011/10/17 · arxiv updated 2011/10/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present magnetoresistance measurements on large scale monolayer graphene grown by chemical vapor deposition (CVD) on copper. The graphene layer was transferred onto SiO2/Si via PMMA and thermal release tape for transport measurements. The resulting centimeter-sized graphene samples were measured at temperatures down to 30mK in a magnetic field. We observe a very sharp peak in resistance at zero field, which is well fitted by weak localization theory. The samples exhibit conductance fluctuations symmetric in field, which are attributed to ensemble averaged conductance fluctuations due to large scale inhomogeneities consistent with the grain boundaries of copper during the CVD growth.