2018/07/10 by Kristin Kliemt, Kliemt, Kristin, Michael Bolte +3
Earth and Planetary Sciences · Physics and Astronomy · #Advanced Condensed Matter Physics #FOS: Physical sciences #High-pressure geophysics and materials #Rare-earth and actinide compounds #Strongly Correlated Electrons (cond-mat.str-el)
paper · pdf · doi:10.48550/arxiv.1807.03657
openalex publication_date 2018/07/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Single crystals of HoIr2Si2 with the body-centered ThCr2Si2-type structure (I4/mmm) were grown by Bridgman method from indium flux. Single crystal structure determination yielded a Si-z position of 0.378(1) in the structure. We excluded the presence of the high temperature phase with the primitive CaBe2Ge2-type structure (P 4/n m m) by powder X-ray diffraction. Magnetic measurements on the single crystals yield a Neel temperature of T\rm N=22 \rm K. In the inverse magnetic susceptibility a strong anisotropy with Weiss temperatures ΘW001=26 \rm K and ΘW100=-26 \rm K occurs above T\rm N. The effective magnetic moment μ\rm eff001=10.64μB and μ\rm eff100=10.53μB is close to the expected value for a free Ho3+ ion, μ\rm effcalc=10.6μB. The field dependent magnetization shows a step-like behaviour due to crystalline electric field effects.