Structural stability, electronic band structure, and optoelectronic properties of quaternary chalcogenide CuZn2MS4 (M =In and Ga) compounds via first principles

2023/12/27 by Anima Ghosh, R. Thangavel, Ghosh, Anima +1
Engineering · Materials Science · #Chalcogenide Semiconductor Thin Films #Crystal Structures and Properties #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum Dots Synthesis And Properties

paper · pdf · doi:10.48550/arxiv.2312.16390

openalex publication_date 2023/12/27 · openalex created_date 2023/12/30 · openalex updated_date 2026/07/28

Abstract

Quaternary chalcogenide compositions have been broadly explored due to their promising potential for various optoelectronic applications. The band structure, density of states and optical properties of CuZn2InS4 and CuZn2GaS4 for kesterite and stannite structures were studied with full potential augmented plane wave method (FP-LAPW) via Wien2k code. The total energy in equilibrium was calculated for different possible crystal structures and their phase stability, and transitions with p-d orbitals were analyzed. The absorption coefficient, dielectric function, and refractive index of these materials were also explored within a broad range of energy. We compared the calculated band gap values with available experimental results.

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