Simulated ion-sputtering and Auger electron spectroscopy depth profiling study of intermixing in Cu/Co

2005/12/02 by M. Menyhárd, Menyhárd, M., P. Süle +1
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.cond-mat/0512053

3 pages, 3 figures

arxiv created 2005/12/02 · arxiv updated 2009/12/01

Abstract

The ion-bombardment induced evolution of intermixing is studied by molecular dynamics simulations and by Auger electron spectroscopy depth profiling analysis (AESD) in Cu/Co multilayer. It has been shown that from AESD we can derive the low-energy mixing rate and which can be compared with the simulated values obtained by molecular dynamics (MD) simulations.The overall agreement is reasonably good hence MD can hopefully be used to estimate the rate of intermixing in various interface systems.

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