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Test of UFSD Silicon Detectors for the TOTEM Upgrade Project

2017/02/16 by Arcidiacono, R., Berretti, M., Bossini, E. +10
#FOS: Physical sciences #High Energy Physics - Experiment (hep-ex) #Instrumentation and Detectors (physics.ins-det)

paper · doi:10.48550/arxiv.1702.05180

Abstract

This paper describes the performance of a prototype timing detector, based on 50 micrometer thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the pixel capacitance and the bias voltage is investigated here. A timing precision from 30 ps to 100 ps, depending on the pixel capacitance, has been measured at a bias voltage of 180 V. Timing precision has also been measured as a function of the bias voltage.

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