2022/06/16 by Daniel Headland, Headland, Daniel, Yosuke Nishida +7
Engineering · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Optics (physics.optics) #Photonic and Optical Devices #Superconducting and THz Device Technology #Terahertz technology and applications
paper · pdf · doi:10.48550/arxiv.2206.08184
openalex publication_date 2022/06/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
Terahertz technology is largely dependent upon planar on-chip antennas that radiate downwards through the substrate, and so an effective means to interface these antennas with integrated waveguides is an attractive prospect. We present a viable methodology for backside coupling between a terahertz oscillator chip and a broadband all-intrinsic-silicon dielectric waveguide. Our investigation employs resonant tunneling diodes as compact two-terminal electronic terahertz oscillators, and terahertz waves are observed from 270 GHz to 409 GHz. The fact that this power is accessed via a curved length of silicon waveguide validates successful backside coupling.