2025/04/22 by Yiyan Fan, Fan, Yiyan, Qinghua Zhang +25 · 1 citation
Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Photonic and Optical Devices #Quantum and electron transport phenomena #Topological Materials and Phenomena
paper · pdf · doi:10.48550/arxiv.2504.15563
openalex publication_date 2025/04/22 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Topologically protected spin states hold great promise for applications in next generation of memory circuits and spintronic devices. These intriguing textures typically emerge in bulk materials or heterostructures with broken inversion symmetry, accompanied by an enhanced Dzyaloshinskii-Moriya interaction (DMI). In this study, we successfully induced the topological Hall effect (THE) in atomically designed (DyScO3)n/(SrRuO3)n (DnSn) superlattices over a significant range of temperatures (10~120K) and thicknesses (16~40nm). Using magnetic force microscopy (MFM), we observed the formation and stability of magnetic domains, such as topological skyrmions. By precisely controlling the interlayer thickness (n) and biaxial strain, we elucidated the mechanisms underlying the modulation and induction of magnetic topological states. Supporting evidence was provided by scanning transmission electron microscopy (STEM) and X-ray absorption spectroscopy (XAS), thereby lending further credence to our conclusions. These heterostructures offer a universal method for exploring topological phenomena driven by distorted octahedra, while enhancing the integrability and addressability of topologically protected functional devices.