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The influence of gain compression factor on dynamical properties of\n single level InAs/GaAs quantum dot lasers

2016/02/10 by Mostafa Qorbani, Esfandiar Rajaei, Qorbani, Mostafa +5
Engineering · Physics and Astronomy · #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices #Photonic and Optical Devices

paper · pdf · doi:10.48550/arxiv.1602.03502

Abstract

In this paper, by representing a single level rate equation model for\nInAs/GaAs quantum dot lasers and computations by fourth order Runge-Kutta\nmethod some characteristics of the output laser are considered. The change of\nphoton number in time and current and also the output power versus current with\ndifferent gain compression factors are investigated for lasing from ground\nstate (GS). Afterwards, the response function of small signal modulation for\nground state in constant current but different gain compressions is surveyed.\nAt last, we find an optimum value for gain compression factor in lasing from\nGS.\n

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