2004/03/19 by E. Johnston-Halperin, Ezekiel Johnston‐Halperin, Johnston-Halperin, E. +14
Engineering · Materials Science · Physics and Astronomy · #Anodic Oxide Films and Nanostructures #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #Semiconductor materials and devices #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0403518
10 pages, 3 figures, submitted to APL Mar '04
arxiv created 2004/03/19 · openalex publication_date 2004/03/19 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The recent development of the superlattice nanowire pattern transfer (SNAP) technique allows for the fabrication of arrays of nanowires at a diameter, pitch, aspect ratio, and regularity beyond competing approaches. Here, we report the fabrication of conducting Si nanowire arrays with wire widths and pitches of 10-20 nm and 40-50 nm, respectively, and resistivity values comparable to the bulk through the selection of appropriate silicon-on-insulator substrates, careful reactive-ion etching, and spin-on glass doping. These results promise the realization of interesting nano-electronic circuits and devices, including chemical and biological sensors, nano-scale mosaics for molecular electronics, and ultra-dense field-effect transistor (FET) arrays.