2003/03/02 by Leonid P. Rokhinson, Rokhinson, L. P., D. C. Tsui +5
Biochemistry, Genetics and Molecular Biology · Engineering · Physics and Astronomy · #Advanced Electron Microscopy Techniques and Applications #FOS: Physical sciences #Force Microscopy Techniques and Applications #Integrated Circuits and Semiconductor Failure Analysis #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · pdf · doi:10.48550/arxiv.cond-mat/0303011
openalex publication_date 2003/03/02 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Recently developed AFM local anodic oxidation (LAO) technique offers a convenient way of patterning nanodevices, but imposes even more stringent requirements on the underlying quantum well structure. We developed a new very shallow quantum well design which allows the depth and density of the 2D gas to be independently controlled during the growth. A high mobility (0.5 106 cm2/Vs at 4.2 K) 2D hole gas just 350A below the surface is demonstrated. A quantum point contact, fabricated by AFM LAO nanopatterning from this wafer, shows 9 quantum steps at 50 mK.