2016/04/06 by A. S. Bhattacharyya, Bhattacharyya, A. S., Rishdeo Kumar +11
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices #Topological Materials and Phenomena
paper · pdf · doi:10.48550/arxiv.1604.02020
openalex publication_date 2016/04/06 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The article consists of four sections all dealing with the computational modeling of the sputtering process. The first section deals with the difference in Bismuth atomic layer deposition at different polar angle and ion flounce. In the second section, atomic layer deposition was studied as a function of incident Argon ion energy at different pressure conditions. A curve analogous to Bragg curve was obtained .In the third section TiOx films was developed by simulations. The sputtering parameters were varied to get different atomic layers. The variation of coverage with sticking coefficient was shown. The last section deals with sputter based deposition of TiN films. The rate of change of partial sputtering yield with coverage was considered. The deposition pressure and time were varied to get films of different thickness. All the sections are stored separately