Steering of Sub-GeV positrons by ultra-thin bent Silicon crystal for ultra slow extraction applications

2024/09/20 by M. Garattini, D. Annucci, Garattini, M. +15
Engineering · Physics and Astronomy · #Accelerator Physics (physics.acc-ph) #Crystallography and Radiation Phenomena #FOS: Physical sciences #Muon and positron interactions and applications #Radiation Detection and Scintillator Technologies

paper · pdf · doi:10.48550/arxiv.2409.13526

openalex publication_date 2024/09/20 · openalex created_date 2024/10/31 · openalex updated_date 2026/07/28

Abstract

For the first time at the Beam Test Facility of the DAΦNE accelerator complex at the Laboratori Nazionali di Frascati of INFN, 450 MeV positrons have been deflected with high efficiency, using the Planar Channeling process in a bent silicon crystal. The deflection angle obtained is beyond 1 mrad. This interesting result finds several applications for manipulation of this kind of beams, in particular for slow extraction from leptons circular accelerators like DAΦNE. In this work the experimental apparatus, the measurement procedure and the experimental results are reported.

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