Carrier localization and out of plane anisotropic magnetoresistance in Nd_0.55-x Sm_x Sr_0.45 Mn O₃ thin films

2013/01/17 by Srivastava, M. K., Kaur, A., Singh, H. K.
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Strongly Correlated Electrons (cond-mat.str-el)

paper · doi:10.48550/arxiv.1301.4043

Abstract

The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated in NSSMO thin films. Carrier localization is caused by the reduced average radius of the A-site of the perovskite lattice and enhanced size disorder due to substitution of smaller cations for larger.

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