2016/01/16 by Yiheng Lin, Wei Shi, Lin, Yiheng +23
Engineering · Physics and Astronomy · #FOS: Physical sciences #Fabrication #Layer (electronics) #Materials Science (cond-mat.mtrl-sci) #Materials science #Nanotechnology #Optoelectronics #Photonic and Optical Devices #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices #Trapping #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1601.04108
openalex publication_date 2016/01/16 · arxiv created 2017/01/28 · arxiv updated 2017/01/31 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06
High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (ART) technique. The GaAs/ART-Ge/Si-based DBRs have reflectivity spectra comparable to those grown on conventional bulk off-cut GaAs substrates and have smooth morphology, and good periodicity and uniformity. Anitphase domain formation is significantly reduced in GaAs on ART-Ge/Si substrates, and etch pit density of the GaAs base layer on the ART-Ge substrates ranges from 105 to 6 x 106 cm^(-2). These results paved the way for future VCSEL growth and fabrication on these ART-Ge substrates and also confirm that virtual Ge substrates via ART technique are effective Si platforms for optoelectronic integrated circuits.