A simple method for monitoring uniformity of epitaxial semiconductor structures

2006/08/23 by G. G. Kozlov, Kozlov, G. G.
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Optical Coatings and Gratings #Surface Roughness and Optical Measurements #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.cond-mat/0608503

2 pages, 2 figures

arxiv created 2006/08/23 · openalex publication_date 2006/08/23 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

A simple method for visualization of nonuniformity of planar MBE structures is proposed. The method is based on measuring the relief of the photo-EMF. The method can be applied to a wide variety of semiconductor structures and does not require any expensive equipment.

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