2024/07/10 by Bárbara L. T. Rosa, Rosa, Bárbara L. T., Paulo Justiniano Ribeiro Júnior +15 · 2 citations
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena
paper · pdf · doi:10.48550/arxiv.2407.08063
openalex publication_date 2024/07/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30
The impressive physics and applications of intra- and interlayer excitons in a transition metal dichalcogenide twisted-bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrical fields. This work studies the electrical control of excitonic complexes in twisted MoSe2 homobilayer devices at room temperature. Gate-dependent micro-photoluminescence spectroscopy reveals an energy tunability of several meVs originating from the emission of excitonic complexes. Furthermore, our study investigates the twist-angle dependence of valley properties by fabricating devices with stacking angles of θ∼1°, θ∼4° and θ∼18°. Strengthened by density functional theory calculations, the results suggest that, depending on the twist angle, the conduction band minima and hybridized states at the Q-point promote the formation of intervalley hybrid trions involving the Q-and K-points in the conduction band and the K-point in the valence band. By revealing the gate control of exciton species in twisted homobilayers, our findings open new avenues for engineering multifunctional optoelectronic devices based on ultrathin semiconducting systems.