2019/01/15 by M. Fleischmann, Fleischmann, M., R.S. Gupta +7 · 1 citation
Engineering · Materials Science · #2D Materials and Applications #Boron and Carbon Nanomaterials Research #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · pdf · doi:10.48550/arxiv.1901.04679
openalex publication_date 2019/01/15 · openalex created_date 2022/07/30 · openalex updated_date 2026/07/28
The valence band edge in tiny angle twist bilayers of MoS2 and phosphorene\nis shown to consist of highly localized energy levels created by a `moir 'e\nquantum well', i.e. trapped by the interlayer moir 'e potential. These\napproximately uniformly spaced energy levels exhibit a richly modulated charge\ndensity, becoming ultra-localized at the valence band maximum. The number and\nspacing of such levels is controllable by the twist angle and interlayer\ninteraction strength, suggesting the possibility of `moir 'e engineering'\nordered arrays of quantum dots in 2d twist semi-conductors.\n