Passivation of dangling bonds on hydrogenated Si(100)-2×1: a possible method for error correction in hydrogen lithography

2017/06/06 by Niko Pavliček, Zsolt Majzik, Pavliček, Niko +4
Biochemistry, Genetics and Molecular Biology · Physics and Astronomy · #Advanced Electron Microscopy Techniques and Applications #Applied Physics (physics.app-ph) #FOS: Physical sciences #Force Microscopy Techniques and Applications #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices

paper · pdf · doi:10.48550/arxiv.1706.02560

openalex publication_date 2017/06/06 · openalex created_date 2017/06/15 · openalex updated_date 2026/07/28

Abstract

Using combined low temperature scanning tunneling microscopy (STM) and atomic force microscopy (AFM), we demonstrate hydrogen passivation of individual, selected dangling bonds (DBs) on a hydrogen-passivated Si(100)-2×1 surface (H-Si) by atom manipulation. This method allows erasing of DBs and thus provides an error-correction scheme for hydrogen lithography. Si-terminated tips (Si tips) for hydrogen desorption and H-terminated tips (H tips) for hydrogen passivation are both created by deliberate contact to the H-Si surface and are assigned by their characteristic contrast in AFM. DB passivation is achieved by transferring the H atom that is at the apex of an H tip to the DB, reestablishing a locally defect-free H-Si surface.

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