Anharmonic decay of phonons in semiconductors from first-principles calculations

1994/08/18 by A. Debernardi, Alberto Debernardi, Stefano Baroni +4
Engineering · Materials Science · Physics and Astronomy · #Condensed Matter (cond-mat) #FOS: Physical sciences #Semiconductor materials and devices #Semiconductor materials and interfaces #Thermal properties of materials #cond-mat

paper · pdf · doi:10.48550/arxiv.cond-mat/9408051

4 pages, uuencoded, compressed POSTSCRIPT file (debernardi.ps.Z). To extract it, use uudecode and uncompress in turn, SISSA Ref. 116/94/CM/SC

arxiv created 1994/08/18 · openalex publication_date 1994/08/18 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The anharmonic contribution to phonon lifetime and its temperature dependence is calculated from first principle in C, Si and Ge using third-order density-functional perturbation theory. Good agreement with available experimental data is obtained. Different competing two-phonon decay channels are compared and correlated with the density of final states.

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